 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts Features N-Channel TO-220 and D2PAK * * * * * Low RDS(on) Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature http://onsemi.com Typical Applications 74 AMPERES 30 VOLTS RDS(on) = 9.3 m Max N-Channel D * DC-DC Converters * Low Voltage Motor Control * Power Management in Portable and Battery Powered Products: Ie: Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 M) Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TC = 25C - Continuous @ TC = 100C - Single Pulse (tpv10 s) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 mH IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS Value 30 30 "20 74 47 175 80 0.66 -55 to +150 722 Adc Apk W W/C C mJ 1 Unit Vdc Vdc Vdc 4 S 1 TO-220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418AA STYLE 2 4 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain NTx4302 LLYWW C/W RJC RJA TL 1.55 70 260 C 1 Gate 2 Drain 3 Source 1 Gate NTx4302 LLYWW 3 Source 2 Drain 1. When surface mounted to an FR4 Board using minimum recommended Pad Size, (Cu Area 0.412 in2). 2. Current limited by internal lead wires. x NTx4302 LL Y WW = P or B = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP4302 NTB4302 NTB4302T4 Package TO-220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel (c) Semiconductor Components Industries, LLC, 2003 1 October, 2003 - Rev. 1 Publication Order Number: NTP4302/D NTP4302, NTB4302 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 37 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 10 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 24 Vdc, ID = 37 Adc, Vd Ad VGS = 4.5 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR - - - - - - 0.90 0.75 37 21 16 0.035 1.3 - - - - - C Vdc ns (VDD = 24 Vdc, ID = 10 Adc, VGS = 4.5 Vdc, RG = 2.5 ) (Note 3) (VDD = 24 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 2.5 ) (Note 3) td(on) tr td(off) tf td(on) tr td(off) tf QT Qgs Qgd - - - - - - - - - - - 10 22 45 35 18 70 32 30 28 7.5 19 18 35 75 70 - - - - - - - nC ns ns (VDS = 24 Vdc, VGS = 0 Vdc, Vd Vd f = 1.0 MHz) Ciss Coss Crss - - - 2050 640 225 2400 800 310 pF VGS(th) 1.0 - RDS(on) - 6.8 6.8 9.5 40 9.3 9.3 12.5 - mhos 1.9 -3.8 3.0 - Vdc mV/C m V(BR)DSS 30 - IDSS - - IGSS - - - - 1.0 10 100 nAdc - 25 - - Vdc mV/C Adc Symbol Min Typ Max Unit gFS - http://onsemi.com 2 NTP4302, NTB4302 60 ID, DRAIN CURRENT (AMPS) TJ = 25_C 4.4 V 4V VDS 10 V 50 40 30 20 TJ = 100C 10 TJ = -55C 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 70 ID, DRAIN CURRENT (AMPS) 60 50 40 30 7V 5V VGS = 10 V 4.6 V 3.8 V 3V 2.8 V TJ = 25C 3.4 V 3.2 V 20 10 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.08 ID = 20 A TJ = 25C 0.06 RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.015 TJ = 25C 0.01 VGS = 4.5 V 0.04 0.005 VGS = 10 V 0.02 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Gate-to-Source Voltage 1.6 ID = 20 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.2 100 TJ = 100C 10 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 0 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTP4302, NTB4302 6000 VDS = 0 V 5000 C, CAPACITANCE (pF) Ciss 4000 3000 2000 1000 0 10 Coss Crss VGS 0 VDS VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 VDS Q1 3 QT VGS Q2 30 VGS = 0 V TJ = 25C 4 24 18 Crss Ciss 2 12 1 ID = 37 A TJ = 25C 0 10 20 6 10 20 30 0 30 GATE-TO-SOURCE OR DRAIN-TO-SOURCE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 20 A VGS = 10 V t, TIME (ns) 100 tr 25 20 VGS = 0 V TJ = 25C td(off) tf 15 10 10 td(on) 5 1 1 10 RG, GATE RESISTANCE () 100 0 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variations versus Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) Figure 10. Diode Forward Voltage versus Current Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) with one die operating, 10 s max. VGS = 20 V SINGLE PULSE TC = 25C 10 s 100 s 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 800 ID = 17 A 700 600 500 400 300 200 100 0 25 50 75 100 125 150 100 10 1 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NTP4302, NTB4302 SAFE OPERATING AREA 1.00 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.10 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) 1.0E-01 t1 0.05 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01 Figure 13. Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 NTP4302, NTB4302 PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP4302, NTB4302 PACKAGE DIMENSIONS D2PAK CASE 418AA-01 ISSUE O C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 --- 0.100 BSC 0.018 0.025 0.090 0.110 0.280 --- 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 --- 2.54 BSC 0.46 0.64 2.29 2.79 7.11 --- 14.60 15.88 1.14 1.40 V W A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) J W DIM A B C D E F G J K M S V M TB M VARIABLE CONFIGURATION ZONE U STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN M M M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 http://onsemi.com 7 NTP4302, NTB4302 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTP4302/D |
Price & Availability of NTP4302
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |